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Электронный компонент: RF101L2S

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RF101L2S
Diodes
Rev.A
1/3
Fast recovery Diode
RF101L2S

Applications
General rectification

Features
1) Small power mold type. (PMDS)
2) Ultra low V
F
3) Very fast recovery
4) Low switching loss

Construction
Silicon epitaxial planar
External dimensions (Unit : mm)











Land size figure (Unit : mm)








Structure

2.0
4.
2
2.
0
Taping specifications (Unit : mm)








Absolute maximum ratings (Ta=25
C)







Electrical characteristics (Ta=25
C)




Symbol
Min.
Typ.
Max.
Unit
V
F
-
0.815
0.87
V
I
F
=1.0A
Reverse current
I
R
-
0.01
10
A
V
R
=200V
Reverse recovery time
trr
-
12
25
ns
I
F
=0.5A,I
R
=1A,Irr=0.25*I
R
Parameter
Conditions
Forward voltage
Symbol
Unit
Rverse voltage (repetitive peak)
V
RM
V
V
R
V
ard current (*1)
Io
A
orward peak surge current (60Hz
1cyc.)
I
FSM
A
Tj
Tstg
c=90
max Mounted on epoxy board. 180Half sine wave
Limits
200
200
-55 to +150
1
20
150
Parameter
Average rectified forw
F
Junction temperature
Storage temperature
(*1)T
Reverse voltage (DC)
ROHM : PMDS
JEDEC : SOD-106
Manufacture date
6
6
0.10.02
0.1
2.60.2
2.00.2
5.
0
0
.
3
1.
2
0
.
3
4.
5
0
.
2
1.50.2
4.00.1
2.90.1
4.00.1
2.00.05
1.550.05
5
.
5
0.
05
1.
75
0.
1
12
0.
2
1.55
9.
5
0.
1
0.3
5.
3
0.
1

0
.
0
5
2.8MAX
RF101L2S
Diodes
Rev.A
2/3
Electrical characteristic curves (Ta=25
C)











FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
RW
AR
D
C
U
RRE
N
T
:
I
F(
A)





































0.001
0.01
0.1
1
0
100 200 300 400 500 600 700 800 900
Ta=150
Ta=25
Ta=-25
Ta=75
Ta=125
RE
VE
RSE

CU
R
R
E
N
T:
I
R
(
n
A)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
0.01
0.1
1
10
100
1000
10000
0
50
100
150
200
Ta=150
Ta=25
Ta=-25
Ta=75
Ta=125
CA
P
A
C
I
TANC
E
BETW
EEN
TE
RM
IN
A
L
S
:
Ct
(p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
1
10
100
0
5
10
15
20
25
30
f=1MHz
C
A
PACIT
A
NCE
BETWEEN
TERM
INAL
S:Ct(
p
F
)
Ct DISPERSION MAP
0
10
20
30
40
50
60
70
80
90
100
AVE:37.0pF
Ta=25
f=1MHz
VR=0V
n=10pcs
RE
VE
R
S
E

C
U
RRE
N
T
:
I
R(
u
A
)
IR DISPERSION MAP
0
10
20
30
40
50
60
70
80
90
100
Ta=25
VR=200V
n=30pcs
AVE:11.1nA
IFSM DISRESION MAP
PE
A
K

S
URGE
F
O
RW
AR
D
C
U
RRE
N
T
:
I
FSM
(
A
)
0
50
100
150
200
AVE:63.0A
8.3ms
Ifsm
1cyc
trr DISPERSION MAP
R
E
SE
R
V
E
R
E
CO
VER
Y

T
IM
E:tr
r
(
n
s
)
0
5
10
15
20
25
30
AVE:12.2ns
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
PEAK S
UR
GE
FOR
W
AR
D

C
U
RR
EN
T
:
I
F
SM
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
10
100
1000
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
PEAK S
UR
GE
F
O
RW
AR
D
C
U
RR
E
N
T
:
IFSM
(
A
TIME:t(ms)
IFSM-t CHARACTERISTICS
)
FOR
W
AR
D

V
O
LT
AG
E:VF(
m
V)
AVE:818.6mV
Ta=25
IF=1A
n=30pcs
800
810
820
830
840
850
VF DISPERSION MAP
10
100
1000
1
10
100
t
Ifsm
TIME:t(s)
Rth-t CHARACTERISTICS
TR
ANSIENT
THAERM
AL
I
MPEDA
N
CE:R
t
h
(
/
W
)
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA
IF=100mA
300us
time
FO
RW
AR
D
P
O
W
E
R
D
I
SSIP
A
T
I
ON:P
f
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
0
0.5
1
1.5
2
0
0.5
1
1.5
2
Sin(180)
D=1/2
DC
RF101L2S
Diodes
Rev.A
3/3

EL
E
C
TRO
S
TATI
C
D
I
SC
HARG
E
TEST
E
SD(
K
V)
ESD DISPERSION MAP
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
AVE:13.6kV
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
A
V
ER
AGE
R
E
CT
IF
IED
F
O
RW
AR
D
C
U
RRE
N
T
:
I
o(
A)
A
V
E
R
A
G
E

R
EC
T
I
FI
ED
FOR
W
A
R
D

CU
RR
E
N
T:
I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
1
2
3
0
25
50
75
100
125
150
T
D=t/
t
V
T
Tj=150
D=t/T
t
VR
Io
VR=100V
0A
0V
DC
D=1/2
Sin(180)
0
1
2
3
0
25
50
75
100
125
150
T
t
0
0
T
Tj=150
D=t/T
t
VR
Io
VR=100V
0A
0V
DC
D=1/2
Sin(180)
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Products listed in this document are no antiradiation design.
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